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Agmon, Pinchas (1979-06-25) I. Design, control, and characterization of the passively mode locked CW dye laser. II. Photoconductive impulse response and excess carrier lifetime of Cr-doped GaAs. http://resolver.caltech.edu/CaltechETD:etd-12282005-104818


Type of Document Dissertation
Author Agmon, Pinchas
URN etd-12282005-104818
Persistent URL http://resolver.caltech.edu/CaltechETD:etd-12282005-104818
Title I. Design, control, and characterization of the passively mode locked CW dye laser. II. Photoconductive impulse response and excess carrier lifetime of Cr-doped GaAs
Degree PhD
Option Applied Physics
Advisory Committee
Advisor Name Title
Amnon Yariv Committee Chair
Keywords
  • none
Date of Defense 1979-06-25
Availability restricted
Abstract
This thesis consists of two parts. The subject of the first part is the design, control, and characterization of the passively mode locked CW dye laser, which is capable of producing a stable continuous train of subpicosecond pulses. Following a description of the laser's elements, the mode stability of its multi-mirror resonator is studied. The monitoring of the laser operational state by pulsewidth and bandwidth measurements is described.

In the second part, the photoconductive impulse response and excess carrier lifetime of semi-insulating Cr:GaAs is studied experimentally and analytically. In the transient photoconductive experiment, the material is irradiated with a continuous train of picosecond light pulses with photon energy above the band-gap energy, generated by the passively mode locked CW dye laser described in part I. A photoconductive decay time of 67 psec is deduced from the observations and interpreted as the result of both bulk and surface recombination. It is shown that it agrees well with longer carrier lifetime in Cr:GaAs measured under steady state conditions with longer illumination wavelengths.

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