| Type of Document |
Dissertation |
| Author |
Parker, Gerhard Hans
|
| URN |
etd-06212004-113629 |
| Persistent URL |
http://resolver.caltech.edu/CaltechETD:etd-06212004-113629 |
| Title |
Tunneling in Schottky barriers |
| Degree |
PhD |
| Option |
Electrical Engineering |
| Advisory Committee |
| Advisor Name |
Title |
| Carver A. Mead |
Committee Member |
|
| Keywords |
|
| Date of Defense |
1969-10-31 |
| Availability |
unrestricted |
Abstract
The tunneling characteristics of metal contacts on n-type CdTe and p-type InAs have been measured. Both the forward and reverse bias characteristics on CdTe are in good agreement with the two-band model for the energy vs. complex momentum relationship. The presence of trapping states increased the magnitude of the tunneling current at low voltage levels by providing a two-step transition. The slope of the forward bias log J vs. V curves for tunneling through the intermediate states was reduced by a factor of 2. The approximate density and energy of the trapping states was calculated from the observed J-V characteristics. The E-k dispersion relation for InAs was also determined and found to be in excellent agreement with the two-band model.
|
| Files |
| Filename |
Size |
Approximate Download Time
(Hours:Minutes:Seconds)
|
| 28.8 Modem |
56K Modem |
ISDN (64 Kb) |
ISDN (128 Kb) |
Higher-speed Access |
| |
Parker_gh_1970.pdf |
1.31 Mb |
00:06:04 |
00:03:07 |
00:02:44 |
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00:00:06 |
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